Patents

Issued Patents

  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Three-dimensional integration of neuro-synaptic chips,” U.S. Patent No. US 10832127B2.
  • Cao, N. Li, “Semiconductor device with a steep subthreshold slope,” U.S. Patent No. US 10319847.
  • Cao, K.-G. Cheng, and Z.-W. Li, “Piezoelectric vacuum transistor,” U.S. Patent No. US10573482B2.
  • Cao, J.-S. Tang, and S.-J. Han, “End-bonded metal contacts on carbon nanotubes,” U.S. Patent No. US10319926B2.
  • Cao, and S.-J. Han, “Three-dimensional integrated multispectral imaging sensor,” U.S. Patent No. US 9881966B2.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Dielectric thermal conductor for passivating efuse and metal resistor,” U.S. Patent No. US 9941202B2.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “High density nanofludic structure with precisely controlled nano-channel dimensions,” U.S. Patent No. US 9679897B1.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Single-electron transistor with self-aligned coulomb blockade,” U.S. Patent No. US 10032897B2.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “FDSOI with on-chip physically unclonable function,” U.S. Patent No. US 10026648B2.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Colorimetric radiation dosimetry based on functional polymer and nanoparticle hybrid,” U.S. Patent No. US 9057787B2.
  • Cao, K.-G. Cheng, and Z.-W. Li, “Vertically integrated nanotube and quantum dot LED for active matrix display,” U.S. Patent No. US 10026912B1.
  • Cao, Y. He, and N. Li, “Biocompatible devices with dissolvable substrates and method of forming the same,” U.S. Patent No. US 9,795,718.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Prevention of reverse engineering of security chips,” U.S. Patent No. US 9853001.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Nanoparticle with plural functionalities, and method of forming the nanoparticle,” U.S. Patent No. US 9859494.
  • Cao, N. Li, and J.-S. Tang, “Metal semiconductor field effect transistor with carbon nanotube gate,” U.S. Patent No. US 9887282.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Integrated circuit having MIM capacitor with refractory metal silicided strap and method to fabricate same,” U.S. Patent No. US 9659939.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Carbon nanotube vacuum transistors,” U.S. Patent No. US 9680116.
  • Cao, K.-G. Cheng, and F. Liu, “Self-destructive circuits under radiation,” U.S. Patent No. US 9685417.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “High density nano-array for sensing,” U.S. Patent No. US 9612224.
  • Cao, S.-J. Han, N. Li, and J.-S. Tang, “Semiconductor device with self-aligned carbon nanotube gate,” U.S. Patent No. US 9704965.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “Multi-faced component-based electromechanical device,” U.S. Patent No. US 9701532.
  • Cao, Y. He, and N. Li, “High-Z nanoparticles embedded in semiconductor package,” U.S. Patent No. US 9607952.
  • Cao, K.-G. Cheng, S.-J. Han, Z.-W. Li, and F. Liu, “Fringing-field assisted dielectrophoresis assembly of carbon nanotubes,” US Patent No. US 9525147.
  • Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang, “Transistor devices with tapered suspended vertical arrays of carbon nanotubes,” US Patent No. US 9502673.
  • Cao, K. Cheng, Z. Li, and F. Liu, “Semiconductor device with authentication code,” US Patent No. US 9502405.
  • Cao, S.-J. Han, and L-W. Hung, “Light sensitive switch for semiconductor package tamper detection,” US Patent No. US 9496230.
  • Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang, “MIS-IL silicon solar cell with passivation layer to induce surface inversion,” US Patent No. US 9466755.
  • Cao, K.-G. Cheng, and F. Liu, “Secure chip with physically unclonable function,” U.S. Patent No. US 9379184.
  • -W. Li, Q. Cao, K.-G. Cheng, F. Liu, and Z. Zhang, “Carbon-doped cap for a raised active semiconductor region,” U.S. Patent No. US 9373702.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “FinFET including varied fin height,” U.S. Patent No. US 9324792.
  • Cao, K.-G. Cheng, Z.-W. Li, F. Liu, and Z. Zhang, “Colorimetric radiation dosimetry based on functional polymer and nanoparticle hybrid,” U.S. Patent No. US 9170337 B2.
  • Cao, and S.-J. Han, “Formation of CMOS device using carbon nanotubes,” US Patent No. US9299939 B1.
  • Cao, and S.-J. Han, “Forming p-n junction contacts by different dielectrics,” US Patent No. US9287516 B2.
  • Cao, and S.-J. Han, “Reactive contacts for 2D layered metal dichalcogenides,” US Patent No. 9147824 B1.
  • Cao, Z.-W. Li, F. Liu, and Z. Zhang, “Replacement gate self-aligned carbon nanostructure transistor,” U.S. Patent No. US 8962408 B2.
  • A. Rogers, Q. Cao, M. A. Alam, and N. Pimparkar, “Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates,” U.S. Patent No. US8946683 B2.
  • Cao, Z.-W. Li, F. Liu, and Z. Zhang, “Niobium thin film stress relieving layer for thin-film solar cells,” U.S. Patent No. US 8822816 B2.
  • Cao, S.-F. Fang, Z.-W. Li, F. Liu, and Z. Zhang, “Self-aligned silicide bottom plate for eDRAM applications by self-diffusing metal in CVD/ALD metal process,” U.S. Patent No. US 8866261 B2.
  • Cao, A. D. Franklin, and J. T. Smith, “Double contacts for carbon nanotubes thin film devices,” U.S. Patent No. US 8754393 B2.
  • Cao, and O. Gunawan, “Magnetic trap for cylindrical diamagnetic materials,” U.S. Patent No. US 8895355 B2.
  • Cao, K.-G. Cheng, Z.-W. Li, F. Liu, and Z. Zhang, “Techniques for fabricating Janus sensors,” U.S. Patent No. US 9251979B2.
  • Cao, Z.-W. Li, F. Liu, and Z. Zhang, “Janus complementary MEMS transistors and circuits,” U.S. Patent No. US 8847287 B1.
  • Cao, D.-C. Guo, S.-J. Han, Y. Lu, and K. K. H. Wong, “Transistor employing vertically stacked self-aligned carbon nanotubes,” U.S. Patent No. US 8772782 B2.
  • Cao, Z.-W. Li, F. Liu, and Z. Zhang, “Techniques for fabricating Janus MEMS transistors,” U.S. Patent No. US 8614136 B1.

 Patent Applications

  • Cao, and Y. Zhang, “Nanostructured bactericidal polymer foil,” U.S. Patent Application No. US 63/07223.
  • Cao, K.-G. Cheng, Z.-W. Li, F. Liu, and Z. Zhang, “Reducing contact resistance by direct self-assembling,” U.S. Patent Application No. US 13/744845.
  • Cao, K.-G. Cheng, Z.-W. Li, and F. Liu, “On-chip integrated temperature protection device based on gel electrolyte,” U.S. Patent Application No. US 15/258347.
  • Cao, K.-G. Cheng, and J.-T. Li, “Nanoparticle structure and process for manufacture,” U.S. Patent Application No. US 15/407432.
  • Cao, H. Deligianni, and F. Liu, “Porous nanostructured electrodes for detection of neurotransmitters,” U.S. Patent Application No. US 15/626363.
  • Cao, H. Deligianni, and F. Liu, “High resolution brain-electronics interface,” U.S. Patent Application No. US 15/466171.